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IS64WV6416EEBLL Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc |
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IS64WV6416EEBLL Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc |
11 / 15 page Integrated Silicon Solution, Inc. — www.issi.com 11 Rev. 00A 10/10/2012 1 2 3 4 5 6 7 8 9 10 11 12 IS61/64WV6416EEBLL DATA RETENTION WAVEFORM (CE Controlled) HIGH SPEED (IS61/64WV6416EEBLL) DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V) Symbol Parameter Test Condition Options Min. Typ.(1) Max. Unit VDr VDDforDataRetention SeeDataRetentionWaveform 2.0 — 3.6 V IDr DataRetentionCurrent VDD=VDr(min), CE ≥VDD–0.2V Com. — 0.5 5 mA Ind. — — 6 Auto. 15 tsDr DataRetentionSetupTime SeeDataRetentionWaveform 0 — — ns trDr RecoveryTime SeeDataRetentionWaveform trc — — ns Note 1: TypicalvaluesaremeasuredatVDD=VDr(min),Ta = 25oc and not 100% tested. VDD CE ≥ VDD - 0.2V tSDR tRDR VDR CE GND Data Retention Mode |
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