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IS61LF25636A Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS61LF25636A
Description  256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc.
1
Rev.  H
07/22/2010
IS61LF25636A    IS61VF25636A    IS64LF25636A
IS61LF51218A    IS61VF51218A 
Copyright©2010IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytimewithout
notice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvisedtoobtainthelat-
estversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.
IntegratedSiliconSolution,Inc.doesnotrecommendtheuseofanyofitsproductsinlifesupportapplicationswherethefailureormalfunctionoftheproductcanreason-
ablybeexpectedtocausefailureofthelifesupportsystemortosignificantlyaffectitssafetyoreffectiveness.Productsarenotauthorizedforuseinsuchapplications
unlessIntegratedSiliconSolution,Inc.receiveswrittenassurancetoitssatisfaction,that:
a.)theriskofinjuryordamagehasbeenminimized;
b.)theuserassumeallsuchrisks;and
c.)potentialliabilityofIntegratedSiliconSolution,Incisadequatelyprotectedunderthecircumstances
FEATURES
• Internalself-timedwritecycle
• IndividualByteWriteControlandGlobalWrite
• Clockcontrolled,registeredaddress,dataand
control
• BurstsequencecontrolusingMODEinput
• Threechipenableoptionforsimpledepthexpan-
sionandaddresspipelining
• Commondatainputsanddataoutputs
• AutoPower-downduringdeselect
• Singlecycledeselect
• SnoozeMODEforreduced-powerstandby
• JTAGBoundaryScanforPBGApackage
• PowerSupply
LF:Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
VF:Vdd 2.5V + 5%, Vddq 2.5V + 5%
• JEDEC100-PinTQFP,119-pinPBGA,and165-
pinPBGApackages
• Lead-freeavailable
• Automotivetemperatureavailable
SEPTEMBER 2010
256K x 36, 512K x 18 
9 Mb SYNCHRONOUS FLOW-THROUGH 
STATIC RAM
DESCRIPTION
The
ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/
VF51218A are high-speed, low-power synchronous
staticRAMsdesignedtoprovideburstable,high-performance
memoryforcommunicationandnetworkingapplications.
TheIS61LF/VF25636AandIS64LF25636Aareorganized
as262,144wordsby36bits.TheIS61LF/VF51218Ais
organizedas524,288wordsby18bits.Fabricatedwith
ISSI'sadvancedCMOStechnology,thedeviceintegrates
a2-bitburstcounter,high-speedSRAMcore,andhigh-
drivecapabilityoutputsintoasinglemonolithiccircuit.All
synchronousinputspassthroughregisterscontrolledby
apositive-edge-triggeredsingleclockinput.
Writecyclesareinternallyself-timedandareinitiatedbythe
risingedgeoftheclockinput.Writecyclescanbeoneto
fourbyteswideascontrolledbythewritecontrolinputs.
Separatebyteenablesallowindividualbytestobewritten.
Bytewriteoperationisperformedbyusingbytewriteen-
able(BWE)inputcombinedwithoneormoreindividual
bytewritesignals(BWx). Inaddition,GlobalWrite(GW)
isavailableforwritingallbytesatonetime,regardlessof
thebytewritecontrols.
BurstscanbeinitiatedwitheitherADSP(AddressStatus
Processor)orADSC(AddressStatusCacheController)
input pins. Subsequent burst addresses can be gener-
atedinternallyandcontrolledbytheADV(burstaddress
advance)inputpin.
Themodepinisusedtoselecttheburstsequenceorder,
LinearburstisachievedwhenthispinistiedLOW.Inter-
leaveburstisachievedwhenthispinistiedHIGHorleft
floating.
FAST ACCESS TIME
Symbol 
Parameter 
-6.5 
-7.5 
Units
tkq
ClockAccessTime
6.5
7.5
ns
tkc
CycleTime
7.5
8.5
ns
Frequency
133
117
MHz


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