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IS61LF25636A Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc

Part # IS61LF25636A
Description  256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LF25636A Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc.
11
Rev. H
07/22/2010
 IS61/64LF25636A   IS61LF51218A   IS61VF25636A   IS61VF51218A
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
  External Address 
1st Burst Address 
2nd Burst Address 
3rd Burst Address
 
A1  A0 
A1  A0 
A1  A0 
A1  A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
     
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAxIMUM RATINGS(1)
  Symbol  Parameter 
Value 
Unit
TsTg
StorageTemperature
–55to+150
°C
Pd
PowerDissipation
1.6
W
IOuT
OutputCurrent(perI/O)
100
mA
VIN, VOuT VoltageRelativetoVssforI/OPins
–0.5toVddq + 0.5
V
VIN
VoltageRelativetoVssfor
–0.5toVdd + 0.5
V
forAddressandControlInputs
Vdd
VoltageonVddSupplyRelativetoVss
–0.5to4.6
V
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycauseperma-
nentdamagetothedevice.Thisisastressratingonlyandfunctionaloperationofthedevice
attheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthis
specificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextended
periodsmayaffectreliability.
2.Thisdevicecontainscircuitytoprotecttheinputsagainstdamageduetohighstaticvoltages
orelectricfields;however,precautionsmaybetakentoavoidapplicationofanyvoltage
higherthanmaximumratedvoltagestothishigh-impedancecircuit.
3.ThisdevicecontainscircuitrythatwillensuretheoutputdevicesareinHigh-Zatpowerup.


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