IS31AP4990D

Integrated Silicon Solution, Inc. – www.issi.com

4

Rev.A, 11/22/2011

ABSOLUTE MAXIMUM RATINGS (Note 1)

-

0.3V ~ +6.0V

Voltage at any input pin

-

-

40°C ~ +150°C

Storage temperature range, Tstg

-

65°C ~ +150°C

Operating temperature ratings

−40°C ~ +85°C

Power dissipation (Note 2)

Internally Limited

Note 1:

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Note 2:

For the IS31AP4990D, see power derating curves for additional information.

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

Power supply

2.7

5.5

V

Quiescent current

3.8

6.4

mA

2.8

5.1

Shutdown current

1

μA

Shutdown voltage input high

1.4

V

Shutdown voltage input low

0.4

V

Output offset voltage

25

mV

Po

Output power (8Ω)

THD+N = 1%, f = 1kHz

1.20

W

THD+N = 10%, f = 1kHz

1.50

THD+N = 1%, f = 1kHz

0.418

THD+N = 10%, f = 1kHz

0.525

Wake-up time (Note 3)

115

ms

102

THD+N

Total harmonic distortion +

noise (Note 3)

0.23

%

0.15

PSRR

Power supply rejection ratio

(Note 3)

Input grounded

f = 217Hz

61

dB

f = 1kHz

65

Input grounded

f = 217Hz

62

f = 1kHz

66

Note 3:

Guaranteed by design.