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IS25LD040 Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS25LD040 Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 36 page IS25LD040 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 1 FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LD040: 512K x 8 (4 Mbit) • Cost Effective Sector/Block Architecture - 4Mb : Uniform 4KByte sectors / Eight uniform 64KByte blocks • Low standby current 1uA (Typ) • Serial Peripheral Interface (SPI) Compatible - Supports single- or dual-output - Supports SPI Modes 0 and 3 - Maximum 33 MHz clock rate for normal read - Maximum 100 MHz clock rate for fast read • Page Program (up to 256 Bytes) Operation - Typical 2 ms per page program • Sector, Block or Chip Erase Operation - Maximum 10ms sector, block or chip erase • Low Power Consumption - Typical 10 mA active read current - Typical 15 mA program/erase current • Hardware Write Protection - Protect and unprotect the device from write operation by Write Protect (WP#) Pin • Software Write Protection - The Block Protect (BP2, BP1, BP0) bits allow partial or entire memory to be configured as read- only • High Product Endurance - Guaranteed 200,000 program/erase cycles per single sector - Minimum 20 years data retention • Industrial Standard Pin-out and Package - 8-pin 150mil SOIC - 8-pin 208mil SOIC - 8-pin 300mil PDIP - 8-contact WSON - 8-pin 150mil VVSOP - Lead-free (Pb-free), package GENERAL DESCRIPTION The IS25LD040 are 4Mbit Serial Peripheral Interface (SPI) Flash memories, providing single- or dual-output. The devices are designed to support a 33 MHz clock rate in normal read mode, and 100 MHz in fast read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers. The IS25LD040 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (SlO), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. They comply with all recognized command codes and operations. The dual-output fast read operation provides and effective serial data rate of 200MHz. The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are divided into uniform 4 KByte sectors or uniform 64 KByte blocks. The IS25LD040 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are offered in 8-pin SOIC 150mil, 8-contact WSON, 8-pin VVSOP 150mil, 8-pin 208mil SOIC and 8-pin 300mil PDIP. The devices operate at wide temperatures between -40°C to +105°C. 4 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface |
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