IS49NLS93200,IS49NLS18160

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. 00F, 09/25/2012

5

2 Electrical Specifications

2.1 Absolute Maximum Ratings

Item

Min

Max

Units

I/O Voltage

0.3

V

0.3

2.8

V

0.3

2.1

V

0.3

2.1

V

Note: Stress greater than those listed in this table may cause permanent damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

2.2 DC Electrical Characteristics and Operating Conditions

Description

Conditions

Symbol

Min

Max

Units

Notes

Supply voltage

2.38

2.63

V

Supply voltage

1.7

1.9

V

2

Isolated output buffer supply

1.4

V

2,3

Reference voltage

V

4,5,6

Termination voltage

V

7,8

Input high voltage

V

2

Input low voltage

V

2

Output high current

A

9, 10,

11

(1.15 x RQ/5)

(0.85 x RQ/5)

Output low current

A

9, 10,

11

(1.15 x RQ/5)

(0.85 x RQ/5)

Clock input leakage current

− 5

5

µA

Input leakage current

− 5

5

µA

Output leakage current

− 5

5

µA

Reference voltage current

− 5

5

µA

Notes:

1.

2.

3.

4.

5.

6.

7.

8.

9.

10. If MRS bit A8 or Ax8 is 0, use RQ = 250Ω in the equation in lieu of presence of an external impedance matched resistor.

2.3 Capacitance

Parameter

Symbol

Test Conditions

Min

Max

Units

Address / Control Input capacitance

1.5

2.5

pF

I/O, Output, Other capacitance (D, Q, DM, QK, QVLD)

3.5

5

pF

Clock Input capacitance

2

3

pF

JTAG pins

2

5

pF

Note. These parameters are not 100% tested and capacitance is not tested on ZQ pin.