2N2907AHR datasheet(4/16 Pages) STMICROELECTRONICS

Part #	2N2907AHR

Description	Hi-Rel 60 V - 0.6 A PNP transistor

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Electrical characteristics

2N2907AHR

4/16

Doc ID 15382 Rev 3

2

Electrical characteristics(a)

JANS and ESCC version of the products are assembled and tested in compliance with the

agency specification it is qualified in. The electrical characteristics of each version are

provided in dedicated tables.

Tcase = 25 °C unless otherwise specified.

2.1

JANS electrical characteristics

a.

For PNP type, voltage and current values are negative.

Table 4.

JANS electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off

current (IE = 0)

VCB = 60 V

VCB = 50 V

VCB= 50 V

Tamb = 150 °C

-

10

µA

nA

µA

ICES

Collector cut-off

current

(IE = 0)

VCE = 50 V

-

50

nA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

VEB = 4 V

-

10

50

µA

nA

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

60

-

V

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 150 mA

IB = 15 mA

IC = 500 mA

IB = 50 mA

-

0.4

1.6

V

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 150 mA

IB = 15 mA

IC=500mA

IB =50mA

0.6

1.3

2.6

V

hFE

(1)

DC current gain

IC = 0.1 mA

VCE = 10 V

IC = 1 mA

VCE = 10 V

IC = 10 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

IC = 500 mA

VCE = 10 V

IC = 10 mA

VCE = 10 V

Tamb = -55 °C

75

100

50

-

450

300

hfe

Small signal current

gain

VCE = 20 V

IC = 20 mA

f = 100 MHz

VCE = 10 V

IC =1 mA

f = 1 kHz

2

100

-

Cobo

Output capacitance

(IE = 0)

VCB = 10 V

100 kHz

≤ f ≤1 MHz

-8

pF

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