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ACE633 Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE633 Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 10 page  ACE633 60V Complementary Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features N-Channel VDS(V)=60V ID=5A RDS(ON) <35mΩ (V GS=10V) <40mΩ (V GS=4.5V) P-Channel VDS(V)=-60V ID=-3.5A RDS(ON) <75 mΩ (V GS=-10V) <90 mΩ (V GS=-4.5V) Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit N-Channel P-Channel Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (TJ=150℃) *AC TA=25℃ ID 5 -3.5 A TA=70℃ 4 -2.8 Drain Current (pulse) * B IDM 22 -22 A Power Dissipation TA=25℃ PD 2 2 W TA=70℃ 1.3 1.3 Operating Junction Temperature TJ -55 to 150 OC Storage Temperature Range TSTG -55 to 150 OC |
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