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CM150DX-24S Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM150DX-24S Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 9 page MITSUBISHI IGBT MODULES CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE 2 Feb. 2011 ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item Conditions Rating Unit VCES Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC DC, TC=120 °C (Note.2) 150 ICRM Collector current Pulse, Repetitive (Note.3) 300 A Ptot Total power dissipation TC=25 °C (Note.2, 4) 1150 W IE (Note.1) TC=25 °C (Note.2, 4) 150 IERM (Note.1) Emitter current Pulse, Repetitive (Note.3) 300 A MODULE Symbol Item Conditions Rating Unit T jm a x Maximum junction temperature - 175 T Cmax Maximum case temperature (Note.2) 125 °C T jo p Operating junction temperature - -40 ~ +150 T st g Storage temperature - -40 ~ +125 °C V is ol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Limits Symbol Item Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.80 2.25 T j =125 °C - 2.00 - VCEsat (Terminal) Collector-emitter saturation voltage IC=150 A (Note.5) , VGE=15 V T j =150 °C - 2.05 - V T j =25 °C - 1.70 2.15 T j =125 °C - 1.90 - VCEsat (Chip) Collector-emitter saturation voltage IC=150 A (Note.5) , VGE=15 V T j =150 °C - 1.95 - V C ies Input capacitance - - 15 C oes Output capacitance - - 3.0 C re s Reverse transfer capacitance VCE=10 V, G-E short-circuited - - 0.25 nF QG Gate charge VCC=600 V, IC=150 A, VGE=15 V - 350 - nC t d( on) Turn-on delay time - - 800 t r Rise time VCC=600 V, IC=150 A, VGE=±15 V, - - 200 t d( of f ) Turn-off delay time - - 600 t f Fall time RG=0 Ω, Inductive load - - 300 ns T j =25 °C - 1.8 2.25 T j =125 °C - 1.8 - VEC (Note.1) (Terminal) Emitter-collector voltage IE=150 A (Note.5) , G-E short-circuited T j =150 °C - 1.8 - V T j =25 °C - 1.7 2.15 T j =125 °C - 1.7 - VEC (Note.1) (Chip) Emitter-collector voltage IE=150 A (Note.5) , G-E short-circuited T j =150 °C - 1.7 - V trr (Note.1) Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 8.0 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 24.2 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 16.0 - Err (Note.1) Reverse recovery energy per pulse Inductive load - 12.2 - mJ Main terminals-chip, per switch, RCC'+EE' Internal lead resistance TC=25 °C (Note.2) - - 1.8 mΩ rg Internal gate resistance Per switch - 13 - Ω |
Similar Part No. - CM150DX-24S |
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Similar Description - CM150DX-24S |
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