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CM300DX-24S Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # CM300DX-24S
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

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MITSUBISHI IGBT MODULES
CM300DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
3
Feb. 2011
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Limits
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
R25
Zero-power resistance
TC=25 °C
(Note.2)
4.85
5.00
5.15
kΩ
ΔR/R
Deviation of resistance
TC=100 °C, R100=493 Ω
-7.3
-
+7.8
%
B(25/50)
B-constant
Approximate by equation
(Note.6)
-
3375
-
K
P25
Power dissipation
TC=25 °C
(Note.2)
-
-
10
mW
THERMAL RESISTANCE CHARACTERISTICS
Limits
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
Rth(j-c)Q
Junction to case, per Inverter IGBT
-
-
0.066
K/W
Rth(j-c)D
Thermal resistance
(Note.2)
Junction to case, per Inverter FWDi
-
-
0.12
K/W
Case to heat sink, per 1 module,
Rth(c-s)
Contact thermal resistance
(Note.2)
Thermal grease applied
(Note.7)
-
15
-
K/kW
MECHANICAL CHARACTERISTICS
Limits
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
Mt
Main terminals
M 6 screw
3.5
4.0
4.5
Ms
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
Terminal to terminal
11.55
-
-
ds
Creepage distance
Terminal to base plate
12.32
-
-
mm
Terminal to terminal
10.00
-
-
da
Clearance
Terminal to base plate
10.85
-
-
mm
m
Weight
-
-
350
-
g
ec
Flatness of base plate
On the centerline X, Y
(Note.8)
±0
-
+100
μm
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate
and heat sink just under the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T jm a x rating.
Note.4: Junction temperature (T j ) should not increase beyond T jm a x rating.
Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit for VCEsat, VEC.
Note.6:
)
T
T
/(
)
R
R
ln(
B
)
/
(
50
25
50
25
50
25
1
1 
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
+:Convex
-:Concave
mounting side
mounting side
mounting side
Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,
"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"
Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"M2.6×10 or M2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.


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