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CM400C1Y-24S Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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CM400C1Y-24S Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
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6 / 9 page  < IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : September 2011 6 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj=25 °C (Chip) VGE=15 V (Chip) 0 100 200 300 400 500 600 700 800 024 68 10 VGE=20 V 13.5 12 11 10 9 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj=25 °C (Chip) G-E short-circuited (Chip) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 IC=800A IC=400A IC=160A 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj=125 °C Tj=25 °C Tj=125 °C Tj=25 °C Tj=150 °C Tj=150 °C |
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