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CM1200HC-50H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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CM1200HC-50H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 7 page  Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES 2000 2400 1600 1200 800 400 0 34 2 1 05 6 5 6 4 3 2 1 0 1200 1600 800 400 0 2000 2400 5 6 4 3 2 1 0 1200 1600 800 400 0 2000 2400 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) 2000 2400 1600 1200 800 400 0 68 4 2 010 12 TRANSFER CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15V VCE = 10V Tj = 25 °C VGE = 10V VGE = 8V VGE = 12V VGE = 20V VGE = 15V |
Similar Part No. - CM1200HC-50H_09 |
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Similar Description - CM1200HC-50H_09 |
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