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CM1800HC-34N Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM1800HC-34N Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 6 page  Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Collector-emitter voltage Gate-emitter voltage Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25 °C VCE = 0V, Tj = 25 °C TC = 75 °C Pulse (Note 1) Pulse (Note 1) TC = 25 °C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125 °C Collector current Emitter current 1700 ±20 1800 3600 1800 3600 10000 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Symbol Item Conditions Unit Ratings V V A A A A W °C °C °C V µs VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc VCE = VCES, VGE = 0V, Tj = 25 °C VGE = VGES, VCE = 0V, Tj = 25 °C IC = 1800A, VGE = 15V, Tj = 25 °C (Note 4) IC = 1800A, VGE = 15V, Tj = 125 °C (Note 4) VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25 °C IE = 1800A, VGE = 0V, Tj = 25 °C (Note 4) IE = 1800A, VGE = 0V, Tj = 125 °C (Note 4) VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9 Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = ±15V RG(off) = 2.2 Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9 Ω, Tj = 125°C, Ls = 100nH Inductive load V V Min Typ Max 6 0.5 2.80 — — — — — 3.30 — — — — — — — — — — — mA µA nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse — — — — — — — — — — — — — — — — — — — — ICES IGES Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 6.0 Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125 °C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150 °C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. ELECTRICAL CHARACTERISTICS Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy IC = 180mA, VCE = 10V, Tj = 25 °C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25 °C — — 2.15 2.40 264 14.4 4.2 10.2 2.60 2.30 1.00 0.40 550 1.20 0.30 560 1.00 720 420 280 7.0 8.0 |
Similar Part No. - CM1800HC-34N_09 |
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Similar Description - CM1800HC-34N_09 |
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