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RFHA1003 Datasheet(PDF) 6 Page - RF Micro Devices |
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RFHA1003 Datasheet(HTML) 6 Page - RF Micro Devices |
6 / 11 page 6 of 11 RFHA1003 DS120216 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 512MHz (T = 25°C, unless noted) 70 60 50 40 30 20 10 0 0.1 1 10 100 P OUT, Output Power (W PEP) IMD versus Output Power (V D = 28V, IDQ = 85mA, f1 = 449.5MHz, f2 = 450.5MHz) IMD3 IMD3 IMD5 IMD5 IMD7 IMD7 9 10 11 12 13 14 15 16 17 18 19 15 20 25 30 35 40 P OUT,Output Power (dBm) Gain versus Output Power (2 Tone 1MHzSeparation, V D = 28V, IDQ varied, fc = 450MHz) 25mA 55mA 85mA 115mA 145mA 0 10 20 30 40 50 60 70 15 20 25 30 35 40 P OUT, Output Power (dBm) DrainEfficiency versus Output Power (2 Tone 1MHz Separation, V D = 28V, IDQ varied, fc= 450MHz) 25mA 55mA 85mA 115mA 145mA 40 35 30 25 20 15 10 0.1 1 10 100 P OUT, Output Power (WPEP) IMD3 versus Output Power (2Tone 1MHz Separation, V D =28V, IDQ varied, fc = 450MHz) 25mA 55mA 85mA 115mA 145mA 0 5 10 15 20 25 0 102030 40 506070 80 90 100 MaximumCase Temperature (°C) Power Dissipation De ratingCurve (Based on Maximum package temperature and R TH) |
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