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100A3R3BW150XC Datasheet(PDF) 2 Page - RF Micro Devices

Part # 100A3R3BW150XC
Description  50MHz TO 1000MHz, 15W GaN WIDEBAND
Download  11 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

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RFHA1000
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)150
V
Gate Voltage (VG)-8 to +2
V
Gate Current (IG)10
mA
Operational Voltage
32
V
RF- Input Power
31
dBm
Ruggedness (VSWR)
12:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
Operating Junction Temperature (TJ)200
°C
Human Body Model
Class 1C
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
Thermal Resistance, RTH (junction to case)
measured at TC = 85°C, DC bias only
6°C/W
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Recommended Operating
Conditions
Drain Voltage (VDSQ)28
32
V
Gate Voltage (VGSQ)-5
-3
-2
V
Drain Bias Current
88
mA
RF Input Power (PIN)30
dBm
Input Source VSWR
10:1
RF Performance
Characteristics
Frequency Range
50
1000
MHz
Small signal 3dB bandwidth
Linear Gain
17.5
dB
POUT = 30dBm, 100MHz
Power Gain
14.5
dB
P3DB, 100MHz
Gain Flatness
3
dB
POUT = 30dBm, 50MHz to 1000MHz
Gain Variation with Temperature
-0.02
dB/°C
Input Return Loss (S11)-10
dB
Output Power (P3dB)
41.5
dBm
50MHz to 1000MHz
Power Added Efficiency (PAE)
60
%
50MHz to 1000MHz
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.


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