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100A3R3BW150XC Datasheet(PDF) 2 Page - RF Micro Devices |
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100A3R3BW150XC Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 11 page 2 of 11 RFHA1000 DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD)150 V Gate Voltage (VG)-8 to +2 V Gate Current (IG)10 mA Operational Voltage 32 V RF- Input Power 31 dBm Ruggedness (VSWR) 12:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C Operating Junction Temperature (TJ)200 °C Human Body Model Class 1C MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only 6°C/W * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Parameter Specification Unit Condition Min. Typ. Max. Recommended Operating Conditions Drain Voltage (VDSQ)28 32 V Gate Voltage (VGSQ)-5 -3 -2 V Drain Bias Current 88 mA RF Input Power (PIN)30 dBm Input Source VSWR 10:1 RF Performance Characteristics Frequency Range 50 1000 MHz Small signal 3dB bandwidth Linear Gain 17.5 dB POUT = 30dBm, 100MHz Power Gain 14.5 dB P3DB, 100MHz Gain Flatness 3 dB POUT = 30dBm, 50MHz to 1000MHz Gain Variation with Temperature -0.02 dB/°C Input Return Loss (S11)-10 dB Output Power (P3dB) 41.5 dBm 50MHz to 1000MHz Power Added Efficiency (PAE) 60 % 50MHz to 1000MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. |
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