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EEV-TG2A101M Datasheet(PDF) 1 Page - RF Micro Devices

Part # EEV-TG2A101M
Description  60W GaN WIDEBAND POWER AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

EEV-TG2A101M Datasheet(HTML) 1 Page - RF Micro Devices

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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Ordering Information
BiFET HBT
LDMOS
RF IN
VG
Pin 1 (CUT )
RF OUT
VD
Pin 2
GND
BASE
RF3932
60W GaN WIDEBAND POWER AMPLIFIER
The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-
tific/medical, and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad fre-
quency range in a single amplifier design. The RF3932 is an unmatched GaN tran-
sistor, packaged in a hermetic flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissi-
pation technologies. Ease of integration is accomplished by incorporating simple,
optimized matching networks external to the package that provide wideband gain
and power performance in a single amplifier.
Features
Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Small Signal Gain = 14dB at
2GHz
48V Operation Typical
Performance
• Output Power 75W at P3dB
•Drain Efficiency 68% at P3dB
• -40°C to 85°C Operation
Applications
Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific, and
Medical
RF3932S2
2-Piece sample bag
RF3932SB
5-Piece bag
RF3932SQ
25-Piece bag
RF3932SR
100 Pieces on 7” short reel
RF3932TR7
750 Pieces on 7” reel
RF3932PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V
DS120406
Package: Hermetic 2-Pin Flanged Ceramic


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