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RFHA1020 Datasheet(PDF) 7 Page - RF Micro Devices

Part # RFHA1020
Description  280W GaN WIDE-BAND PULSED POWER AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA1020 Datasheet(HTML) 7 Page - RF Micro Devices

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RFHA1020
DS120508
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Bias Instruction for RFHA1020 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 50V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD
must be removed before VG is removed. Failure to follow this sequence will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recom-
mended that a small amount of thermal grease is applied to the underside of the device package. Even application and
removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should
then be bolted to the chassis and input and output leads soldered to the circuit board.


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