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STPS41H100C-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS41H100C-Y Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 7 page Characteristics STPS41H100C-Y 2/7 Doc ID 018564 Rev 1 1 Characteristics When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode1) x R th(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.58 x IF(AV) + 0.0045 IF 2 (RMS) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current Tc = 50 °C δ = 0.5 Per diode Per device 20 A 40 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 220 A IRRM Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 18100 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature range(1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to + 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 1.5 °C/W Total 0.8 Rth(c) Coupling 0.1 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 10 μA Tj = 125 °C 3 10 mA VF (1) Forward voltage drop Tj = 25 °C IF = 20 A 0.80 V Tj = 125 °C IF = 20 A 0.62 0.67 Tj = 25 °C IF = 40 A 0.90 Tj = 125 °C IF = 40 A 0.70 0.76 dPtot dTj < 1 Rth(j-a) |
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