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ISL78841ASEHVF Datasheet(PDF) 6 Page - Intersil Corporation |
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ISL78841ASEHVF Datasheet(HTML) 6 Page - Intersil Corporation |
6 / 15 page ISL78840ASEH, ISL78841ASEH, ISL78843ASEH, ISL78845ASEH 6 FN7952.0 May 29, 2012 Absolute Maximum Ratings Thermal Information Supply Voltage VDD Without Beam . . . . . . . . . . . . . . .GND -0.3V to +30.0V Supply Voltage VDD Under Beam . . . . . . . . . . . . . . . . .GND -0.3V to +14.7V OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to VDD + 0.3V Signal Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to 6.0V Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A ESD Rating Human Body Model (Tested per JESD22-A114E) . . . . . . . . . . . . . . . . 2kV Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . 200V Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . 100mA Recommended Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C Supply Voltage (Typical Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 13.2V Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 8 Ld Flatpack Package (Notes 3, 4) 140 15 8 Ld SBDIP Package (Notes 3, 4) 98 15 Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . .+150°C Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Radiation Information Maximum Total Dose Dose Rate = 50 - 100radSi/s . . . . . . . . . . . . . . . . . . . . . . . 100 krads (Si) Dose Rate = 0.01rad(Si)/s (Note 6). . . . . . . . . . . . . . . . . . . . . 100 krad (Si) SEB (No Burnout) (Note 6). . . . . . . . . . . . . . . . . . . . . . . . . . 80Mev/mg/cm2 SEL (No latchup) (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 80Mev/mg/cm2 SET (Regulated VOUT within ±3%) (Note 9) . . . . . . . . . . . . 40Mev/mg/cm2 CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 3. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. For θJC, the "case temp" location is the center of the ceramic on the package underside. 5. All voltages are with respect to GND. 6. Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose rate. Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application schematic on page 3 and page 4. VDD = 13.2V, RT = 10kΩ, CT = 3.3nF, TA = -55 to +125°C. Typical values are at TA = +25°C. Boldface limits apply over the operating temperature range, -55 to +125°C. PARAMETER TEST CONDITIONS MIN (Note 10) TYP MAX (Note 10) UNITS UNDERVOLTAGE LOCKOUT START Threshold ISL78840A, ISL78841A 6.5 7.0 7.5 V ISL78843A, ISL78845A 8.0 8.4 9.0 V STOP Threshold ISL78840A, ISL78841A 6.1 6.6 6.9 V ISL78843A, ISL78845A 7.3 7.6 8.0 V Hysteresis ISL78840A, ISL78841A - 0.4 - V ISL78843A, ISL78845A - 0.8 - V Start-up Current, IDD VDD < START Threshold - 90 125 µA VDD < START Threshold, 100krad - 300 500 µA Operating Current, IDD (Note 7) - 2.9 4.0 mA Operating Supply Current, ID Includes 1nF GATE loading - 4.75 5.5 mA REFERENCE VOLTAGE Overall Accuracy Over line (VDD = 9V to 13.2V), load of 1mA and 10mA, temperature 4.925 5.000 5.050 V Long Term Stability TA = +125°C, 1000 hours (Note 8) - 5 - mV Current Limit, Sourcing -20 - - mA Current Limit, Sinking 5 - - mA CURRENT SENSE Input Bias Current VCS = 1V -1.0 - 1.0 µA Input Signal, Maximum 0.97 1.00 1.03 V |
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