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HUFA76413DK8T Datasheet(PDF) 8 Page - Fairchild Semiconductor |
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HUFA76413DK8T Datasheet(HTML) 8 Page - Fairchild Semiconductor |
8 / 11 page PSPICE Electrical Model .SUBCKT HUFA76413DK8T 2 1 3 ; rev April 2002 CA 12 8 7.8e-10 CB 15 14 9.8e-10 CIN 6 8 5.8e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 67.4 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 1.34e-9 LSOURCE 3 7 0.59e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 22.5e-3 RGATE 9 20 2.2 RLDRAIN 2 5 10 RLGATE 1 9 13.4 RLSOURCE 3 7 5.9 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 15.3e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),2.5))} .MODEL DBODYMOD D (IS = 8e-13 RS = 1.58e-2 TRS1 = 1e-3 TRS2 = 3e-6 XTI=3.2 CJO = 8e-10 TT = 3.2e-8 M = 0.54) .MODEL DBREAKMOD D (RS = 1.18 TRS1 = 2e-3 TRS2 = -2.6e-5) .MODEL DPLCAPMOD D (CJO = 5.7e-10 IS = 1e-30 N = 10 M = 0.87) .MODEL MMEDMOD NMOS (VTO = 1.68 KP = 2 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.2) .MODEL MSTROMOD NMOS (VTO = 2.05 KP =35 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.48 KP = 0.04 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.15e-3 TC2 = -7.5e-7) .MODEL RDRAINMOD RES (TC1 = 8.5e-3 TC2 = 1.2e-5) .MODEL RSLCMOD RES (TC1 = 3e-2 TC2 = 5.3e-7) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -1.4e-3 TC2 = -7e-6) .MODEL RVTEMPMOD RES (TC1 = -1.5e-3 TC2 = 2e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.0 VOFF= -1.0) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= -5.0) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.2 VOFF= 0.2) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.2) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUFA76413DK8T_F085 Rev. C1 www.fairchildsemi.com 8 |
Similar Part No. - HUFA76413DK8T_10 |
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Similar Description - HUFA76413DK8T_10 |
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