FDP039N08B_F102 Rev.C0

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2

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Description

Quantity

FDP039N08B

FDP039N08B_F102

TO-220

F102: Trimmed Leads

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

80

-

-

V

Breakdown Voltage Temperature

Coefficient

-

0.089

-

Zero Gate Voltage Drain Current

-

-

1

mA

-

-

500

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

2.5

-

4.5

V

Static Drain to Source On Resistance

-

3.16

3.9

m

W

Forward Transconductance

-

180

-

S

Input Capacitance

f = 1MHz

-

7105

9450

pF

Output Capacitance

-

1110

1475

pF

Reverse Transfer Capacitance

-

30

-

pF

Energy Related Output Capacitance

-

1656

-

pF

Total Gate Charge at 10V

(Note 4)

-

102

133

nC

Gate to Source Gate Charge

-

39.9

-

nC

Gate Charge Threshold to Plateau

-

20.6

-

nC

Gate to Drain “Miller” Charge

-

22

-

nC

ESR

Equivalent Series Resistance (G-S)

f = 1MHz

-

2.2

-

W

Turn-On Delay Time

(Note 4)

-

36

82

ns

Turn-On Rise Time

-

49

108

ns

Turn-Off Delay Time

-

71

152

ns

Turn-Off Fall Time

-

29

68

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

171*

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

684

A

Drain to Source Diode Forward Voltage

-

-

1.3

V

Reverse Recovery Time

-

70.1

-

ns

Reverse Recovery Charge

-

87.9

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Essentially Independent of Operating Temperature Typical Characteristics