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FDP047N10 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDP047N10 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDP047N10 Rev. C0 www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2 4 6 8 1 10 100 -55 oC 175 oC *Notes: 1. VDS = 20V 2. 250ms Pulse Test 25 oC VGS,Gate-Source Voltage[V] 400 0.1 1 10 100 5 6 10V 8V 7V 6.5 V 6.0 V 5.5 V VGS = 5V *Notes: 1. 250ms Pulse Test 2. TC = 25 oC VDS,Drain-Source Voltage[V] 300 0.0 0.5 1.0 10 100 1.4 300 *Notes: 1. V GS = 0V 2. 250ms Pulse Test 175 oC V SD, Body Diode Forward Voltage [V] 25 oC 2 0 100 200 300 400 0 2 4 6 8 10 *Note: TJ = 25 oC VGS = 20V VGS = 10V ID, Drain Current [A] 0 30 60 90 120 150 180 0 2 4 6 8 10 *Note: ID = 75A VDS = 20V VDS = 50V VDS = 80V Qg, Total Gate Charge [nC] 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 30 |
Similar Part No. - FDP047N10_12 |
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Similar Description - FDP047N10_12 |
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