©2012 Fairchild Semiconductor Corporation

1

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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1

July 2012

FDP16N50 / FDPF16N50 / FDPF16N50T

500V N-Channel MOSFET

Features

• Low gate charge ( typical 32 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

Absolute Maximum Ratings

Symbol

Parameter

FDP16N50

FDPF16N50 /

FDPF16N50T

Unit

Drain-Source Voltage

500

V

Drain Current

16

9.6

16 *

9.6 *

A

A

Drain Current

- Pulsed

(Note 1)

64

64 *

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

780

mJ

Avalanche Current

(Note 1)

16

A

Repetitive Avalanche Energy

(Note 1)

20

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

200

1.59

38.5

0.3

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

FDP16N50

FDPF16N50 /

FDPF16N50T

Unit

Thermal Resistance, Junction-to-Case

0.63

3.3

°C/W

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

* Drain current limited by maximum junction temperature