November 2010

©2010 Fairchild Semiconductor Corporation

FDS8935 Rev.C

www.fairchildsemi.com

1

FDS8935

-80 V, -2.1 A, 183 m

Ω

Features

High power and current handling capability in a widely used

surface mount package

100% UIL Tested

RoHS Compliant

General Description

This P-channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench® process that has

ruggedness.

Applications

Load Switch

Synchronous Rectifier

G2

S1

G1

S2

D2

D2

D1

D1

5

6

7

8

3

2

1

4

Pin 1

SO-8

D1

D1

D2

D2

S2

S1

G1

G2

4

3

2

1

5

6

7

8

Q2

Q1

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

-80

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

-2.1

A

-Pulsed

-10

Single Pulse Avalanche Energy

(Note 3)

37

mJ

Power Dissipation

(Note 1a)

3.1

W

Power Dissipation

(Note 1b)

1.6

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

40

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

78

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS8935

FDS8935

SO-8

13 ’’

12 mm

2500 units