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FGB20N60SFD Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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FGB20N60SFD Datasheet(HTML) 7 Page - Fairchild Semiconductor |
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7 / 9 page  7 www.fairchildsemi.com FGB20N60SFD Rev. A Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time Figure 23.Transient Thermal Impedance of IGBT 0 100 200 300 400 500 600 1E-3 0.01 0.1 1 10 100 T C = 125 oC T C = 25 oC T C = 75 oC Reverse Voltage, V R [V] 01 23 4 0.1 1 10 40 TJ = 75 oC TJ = 25 oC TJ = 125 oC Forward Voltage, VF [V] 0 5 10 15 20 10 20 30 40 50 60 200A/μs di/dt = 100A/μs Forward Current, IF [A] 0 5 10 15 20 10 20 30 40 50 60 200A/μs di/dt = 100A/μs Forward Current, IF [A] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse Rectangular Pulse Duration [sec] Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.5 t1 PDM t2 |
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