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SI8620EC-B-IS Datasheet(PDF) 8 Page - Silicon Laboratories |
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SI8620EC-B-IS Datasheet(HTML) 8 Page - Silicon Laboratories |
8 / 36 page 8 Rev. 1.3 Si8610/20/21/22 Table 3. Electrical Characteristics (VDD1 =3.3 V ±10%, VDD2 =3.3 V ±10%, TA = –40 to 125 ºC) Parameter Symbol Test Condition Min Typ Max Unit VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V VDD Negative-Going Lockout Hysteresis VDDHYS 50 70 95 mV Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V Input Hysteresis VHYS 0.38 0.44 0.50 V High Level Input Voltage VIH 2.0 — — V Low Level Input Voltage VIL —— 0.8 V High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 –0.4 3.1 — V Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V Input Leakage Current IL —— ±10 µA Output Impedance1 ZO —50 — DC Supply Current (All inputs 0 V or at supply) Si8610Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 0.6 0.8 1.8 0.8 1.2 1.5 2.9 1.5 mA Si8620Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 0.8 1.4 3.3 1.4 1.4 2.2 5.3 2.2 mA Si8621Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 1.2 1.2 2.4 2.4 1.9 1.9 3.8 3.8 mA Si8622Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 2.6 3.3 4.0 4.8 4.2 5.3 6.4 7.7 mA Notes: 1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. Start-up time is the time period from the application of power to valid data at the output. |
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