SIZ300DT_12 datasheet(1/14 Pages) VISHAY

Part #	SIZ300DT

Description	Dual N-Channel 30 V (D-S) MOSFETs

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Vishay Siliconix

SiZ300DT

New Product

Document Number: 67715

S12-1361-Rev. D, 11-Jun-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Dual N-Channel 30 V (D-S) MOSFETs

FEATURES

•

PowerPAIR Optimizes High-Side and Low-Side

MOSFETs for Synchronous Buck Converters

•

TrenchFET® Power Mosfets

•

100 % Rg and UIS Tested

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

•

Computing System Power

•

POL

•

Synchronous Buck Converter

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

Qg (Typ.)

Channel-1

30

0.0240 at VGS = 10 V

11

3.5 nC

0.0320 at VGS = 4.5 V

11

Channel-2

30

0.0110 at VGS = 10 V

28

6.8 nC

0.0165 at VGS = 4.5 V

28

PowerPAIR® 3 x 3

Ordering Information:

SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1/D2

D

1

3 mm

Pin 1

3 mm

G

1

D

1

D

1

D

1

2

3

4

8

7

6

5

G

2

S

2

S

2

S

2

(Pin 9)

D1

S2

N-Channel 2

MOSFET

N-Channel 1

MOSFET

G1

S1/D2

G2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

11a

28a

A

TC = 70 °C

11a

28a

TA = 25 °C

9.8b, c

14.9b, c

TA = 70 °C

7.8b, c

11.9b, c

Pulsed Drain Current (t = 300 µs)

IDM

30

40

Continuous Source Drain Diode Current

TA = 25 °C

IS

11a

26

TA = 25 °C

3.2b, c

3.8b, c

Avalanche Current

L = 0.1 mH

IAS

12

15

Single Pulse Avalanche Energy

EAS

711

mJ

Maximum Power Dissipation

TC = 25 °C

PD

16.7

31

W

TC = 70 °C

10.7

20

TA = 25 °C

3.7b, c

4.2b, c

TA = 70 °C

2.4b, c

2.7b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

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