2N2102 datasheet(2/3 Pages) COMSET

Part #	2N2102

Description	MEDIUM POWER AMPLIFIER & SWITCH

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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NPN 2N2102

2 | 3

24/09/2012

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB= 60 V

IE= 0

Tamb= 25°C

-

2

nA

Tamb= 150°C

-

2

µA

IEBO

Emitter Cutoff Current

VEB= 5 V, IC= 0

-

5

nA

VCBO

Collector Base

Sustaining Voltage

IC= 100 µA, IE= 0

120

-

V

VCEO

Collector Emitter

Sustaining Voltage (*)

IC= 30 mA, IB= 0

65

-

V

hFE

DC Current Gain (*)

IC= 10 µA, VCE= 10 V

10

-

IC= 0.1 mA, VCE= 10 V

20

-

IC= 10 mA, VCE= 10 V

35

-

IC= 150 mA, VCE= 10 V

40

-

120

IC= 500 mA, VCE= 10 V

25

-

IC= 1 A, VCE= 10 V

10

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 150 mA, IB= 15 mA

-

0.5

V

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC= 150 mA, IB= 15 mA

-

1.1

V

CC

Collector Capacitance

IE= 0 ,VCB= 10 V

f = 1MHz

-

15

pF

Ce

emitter Capacitance

IC= 0 ,VEB= 0.5 V

f = 1MHz

-

80

pF

(*) Pulse conditions : tp < 300

µs, δ =2%.

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