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2N2329 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N2329 Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page 2N2327 thur 2N2329 12/11/2012 COMSET SEMICONDUCTORS 1 | 3 S SIIL LIIC CO ON N T TH HY YR RIIS ST TO OR RS S All-diffused PNPN thyristors designed for grating operation in mA/ µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2327 2N2328 2N2329 Unit VRSM(REP) Peak reverse blocking voltage (1) 250 300 400 V VRSM(NON- REP) Non-repetitive peak blocking reverse voltage (t<5.0 ms) 350 400 500 V IT(RMS) Forward Current RMS (all conduction angles) 1.6 A ITSM Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. 15 A PGM Peak Gate Power – Forward 0.1 W PG(AV) Average Gate Power - Forward 0.01 W IGM Peak Gate Current – Forward 0.1 A VGFM Peak Gate Voltage - Forward 6.0 V VGRM Peak Gate Voltage - Reverse 6.0 V TJ Operating Junction Temperature Range -65 to +125 °C TSTG Storage Temperature Range -65 to +150 |
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