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BDW84D Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDW84D Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D 23/10/2012 COMSET SEMICONDUCTORS 1 | 3 P PN NP P S SIIL LIIC CO ON N D DA AR RL LIIN NG GT TO ON NS S P PO OW WE ER R T TR RA AN NS SIIS ST TO OR RS S They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB = 0 BDW84 -45 V BDW84A -60 BDW84B -80 BDW84C -100 BDW84D -120 VCBO Collector- Emitter Voltage IE = 0 BDW84 -45 V BDW84A -60 BDW84B -80 BDW84C -100 BDW84D -120 VEBO Emitter-Base Voltage IC = 0 -5 V IC Collector Current -15 A IB Base Current -0.5 A Pt Total Power Dissipation 25°C case temperatur 150 W 25°C free aire temperatur 3.5 TJ Junction Temperature -65 to +150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Junction to Case Thermal Resistance 0.83 °C/W RthJA Junction to Free Air Thermal Resistance 35.7 |
Similar Part No. - BDW84D |
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Similar Description - BDW84D |
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