W49L201T-70 datasheet(1/23 Pages) WINBOND

Part #	W49L201T-70

Description	256K X 8 CMOS FLASH MEMORY

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Manufacturer	WINBOND [Winbond]

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Preliminary W49L201

128K

× 16 CMOS FLASH MEMORY

Publication Release Date: May 2000

- 1 -

Revision A1

GENERAL DESCRIPTION

The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K

× 16 bits. The

device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W49L201 results in fast program/erase operations

with extremely low current consumption (compared to other comparable 3.3-volt flash memory

products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

• Single 3.3-volt operations:

− 3.3-volt Read/Erase/Program

• Fast Program operation:

− Word-by-Word programming: 50 µS (max.)

• Fast Erase operation: 100 mS (typ.)

• Fast Read access time: 70/90 nS

• Endurance: 10K cycles (typ.)

• Ten-year data retention

• Hardware data protection

• Sector configuration

− One 8K words Boot Block with lockout

protection

− Two 8K words Parameter Blocks

− One 104K words (208K bytes) Main Memory

Array Blocks

• Low power consumption

− Active current: 15 mA (typ.)

− Standby current: 10 µA (typ.)

• Automatic program and erase timing with

internal VPP generation

• End of program or erase detection

− Toggle bit

− Data polling

• Latched address and data

• TTL compatible I/O

• JEDEC standard word-wide pinouts

• Available packages: 44-pin SOP, 48-pin TSOP

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