CR100-8 datasheet(1/5 Pages) APOLLOELECTRON

Part #	CR100-8

Description	Sensitive Gate Silicon Controlled Rectifiers

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Manufacturer	APOLLOELECTRON [Apollo Electron Co., Ltd.]

Direct Link	http://www.aelectron.com

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Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )

Symbol

Parameter

Condition

Ratings

Units

VDRM

Repetitive Peak Off-State Voltage

sine wave,50 to 60Hz

600

V

IT(AV)

Average On-State Current

half sine wave : TC = 83 °C

0.5

A

IT(RMS)

R.M.S On-State Current

All Conduction Angle

1.0

A

ITSM

Surge On-State Current

1/2 Cycle, 60Hz, sine wave

non-repetitive , t = 8.3ms

10

A

I2t

I2t for Fusing

t = 8.3ms

0.415

A2s

PGM

Forward Peak Gate Power Dissipation

TA = 25 °C, pulse width ≤ 1.0㎲

2W

PG(AV)

Forward Average Gate Power Dissipation

TA = 25 °C, t = 8.3ms

0.1

W

IFGM

Forward Peak Gate Current

TA = 25 °C, pulse width ≤ 1.0㎲

1A

VRGM

Reverse Peak Gate Voltage

TA = 25 °C, pulse width ≤ 1.0㎲

5.0

V

TJ

Operating Junction Temperature

- 40 ~ 110

°C

TSTG

Storage Temperature

- 40 ~ 150

°C

CR100-8

April, 2010. Rev.1

1

/5

Features

◆

Repetitive Peak Off-State Voltage : 600V

◆

R.M.S On-State Current ( IT(RMS)= 1.0 A )

◆

Low On-State Voltage (1.3V(Typ.))

General Description

Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as

small motor control, gate driver for large thyristor, sensing and detecting circuits.

3. Anode

2.Gate

1.Cathode

Symbol

○

▼

IT(RMS) = 1.0A

ITSM = 10A

BVDRM = 600V

Sensitive Gate Silicon Controlled Rectifiers

TO-92

This device may substitute for MCR100-6, MCR100-8 series.

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CR100-8 Datasheet(PDF) 1 Page - Apollo Electron Co., Ltd.

CR100-8 Datasheet(HTML) 1 Page - Apollo Electron Co., Ltd.

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