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2SC3648 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC3648 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 7 page 2SA1418 / 2SC3648 No.1788-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 500 mW When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)120V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA DC Current Gain hFE1VCE=(--)5V, IC=(--)100mA 100* 400* hFE2VCE=(--)5V, IC=(--)10mA 90 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 120 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (11)8 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)250mA, IB=(--)25mA (--0.2)0.12 (--0.5)0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)250mA, IB=(--)25mA (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)160 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-ON Time ton See specified Test Circuit. (60)50 ns Storage Time tstg (900)1000 ns Fall Time tf (60)60 ns * : The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA1418S-TD-E PCP 1,000pcs./reel Pb Free 2SC3648S-TD-E PCP 1,000pcs./reel 2SC3648T-TD-E PCP 1,000pcs./reel INPUT 100V 50 Ω 100 μF 470 μF --5V IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) + + VR PW=20 μs D.C. ≤1% 333 Ω RB IB1 IB2 |
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