TAT7430B

CATV 75 Ω pHEMT High Gain RF Amplifier

Data Sheet: Rev B 03/08/11

- 2 of 7 -

Disclaimer: Subject to change without notice

© 2011 TriQuint Semiconductor, Inc.

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Specifications

Absolute Maximum Ratings

1

Parameter

Rating

Storage Temperature

Device Voltage

+10 V

1. Operation of this device outside the parameter ranges given

above may cause permanent damage.

Recommended Operating Conditions

Parameter

Min

Typ

Max

Units

5

8

V

190

mA

150

Electrical Specifications

Test conditions unless otherwise noted: 25ºC case temp, +8V Vsupply, DC to 1200 MHz

Parameter

Conditions

Min

Typical

Max

Units

Operational Frequency Range

50

1002

MHz

Gain

22

dB

Gain Flatness

+/- 0.5

dB

Noise Figure at 1 GHz

2.0

dB

Input Return Loss

-22

dB

Output Return Loss

-18

dB

P1dB

+22

dBm

Output IP3

See Note 1.

+41

dBm

Output IP2

See Note 1.

+65

dBm

CSO

See Note 2.

-61

dBc

CTB

See Note 2.

-81

dBc

Idd

190

mA

Thermal Resistance (jnc. to case)

32

Notes:

1. At -21 dBm/tone at input.

2. 10 dBmV/ch at input, 80 ch flat NTSC

3. Electrical specifications are measured at specified test conditions.

4. Specifications are not guaranteed over all recommended operating conditions.