IS43DR82560B datasheet(8/48 Pages) ISSI

Part #	IS43DR82560B

Description	256Mx8, 128Mx16 DDR2 DRAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00B

11/2/2012

IS43/46DR82560B, IS43/46DR16128B

Symbol

Parameter

Rating(1,2,3)

Units

TOPER

Commercial Temperature

Tc = 0 to +85

o

C

Industrial Temperature,

Tc = -40 to +95

o

C

Automotive Temperature (A1)

Ta = -40 to +85

o

C

Automotive Temperature (A2)

Tc = -40 to +105

o

C

Ta = -40 to +105

o

C

Operating Temperature Condition

ODT DC Electrical Characteristics

PARAMETER/CONDITION

SYMBOL

MIN

NOM MAX

UNITS NOTES

Rtt effective impedance value for EMR(1)[A6,A2]=0,1; 75 Ω

Rtt1(eff)

60

75

90

Ω

1

Rtt effective impedance value for EMR(1)[A6,A2]=1,0; 150 Ω Rtt2(eff)

120

150

180

Ω

1

Rtt effective impedance value for EMR(1)[A6,A2]=1,1; 50 Ω

Rtt3(eff)

40

50

60

Ω

1

Deviation of VM with respect to VDDQ/2

ΔVM

- 6

+ 6

%

1

Notes:

1. Test condition for Rtt measurements

Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL

(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18

Rtt (eff)

Vih (ac) - Vil (ac)

I(Vih (ac)) - I(Vil (ac))

Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.

ΔVM = [(2 x VM / VDDQ) - 1] x 100%

Notes:

1. Tc = Operating case temperature at center of package

2. Ta = Operating ambient temperature immediately above package center.

3. Both temperature specifications must be met.

Thermal Resistance: TBD

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