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bq24196RGET Datasheet(PDF) 8 Page - Texas Instruments |
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bq24196RGET Datasheet(HTML) 8 Page - Texas Instruments |
8 / 41 page bq24196 SLUSB98 – OCTOBER 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNITS POWER PATH MANAGEMENT Isys = 0A, Q4 off, VBAT up to 4.2 V, VSYS_RANGE System regulation voltage 3.5 4.35 V REG01[3:1]=101, VSYSMIN = 3.5 V VSYS_MIN System voltage output REG01[3:1]=101, VSYSMIN = 3.5 V 3.55 3.65 V Internal top reverse blocking MOSFET on- RON(RBFET) Measured between VBUS and PMID 23 38 m Ω resistance TJ = –40°C – 85°C 30 38 Internal top switching MOSFET on- RON(HSFET) m Ω resistance between PMID and SW TJ = -40°C – 125°C 30 48 TJ = –40°C – 85°C 35 48 Internal bottom switching MOSFET on- RON(LSFET) m Ω resistance between SW and PGND TJ = -40°C – 125°C 35 51 BATFET forward voltage in supplement VFWD BAT discharge current 10mA 30 mV mode VSYS_BAT SYS/BAT Comparator VSYS falling 90 mV VBATGD Battery good comparator rising threshold VBAT rising 3.4 3.55 3.7 V VBATGD_HYST Battery good comparator falling threshold VBAT falling 100 mV BATTERY CHARGER VBAT_REG_ACC Charge voltage regulation accuracy VBAT = 4.208V –0.5% 0.5% VBAT = 3.8V, ICHG = 1792mA, TJ = 25°C –4% 4% IICHG_REG_ACC Fast charge current regulation accuracy VBAT = 3.8V, ICHG = 1792mA, TJ = –20°C – 125°C –7% 7% ICHG_20pct Charge current with 20% option on VBAT = 3.1V, ICHG = 104mA, REG02=03 75 100 125 mA VBATLOWV Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V VBATLOWV_HYST Battery LOWV rising threshold Precharge to fast charge, REG04[1] = 1 2.8 3.0 3.1 V IPRECHG_ACC Precharge current regulation accuracy VBAT = 2.6V, ICHG = 256mA –20% 20% ITERM_ACC Termination current accuracy ITERM = 256mA, ICHG = 960mA –20% 20% VSHORT Battery Short Voltage VBAT falling 1.8 V VSHORT_HYST Battery Short Voltage hysteresis VBAT rising 200 mV ISHORT Battery short current VBAT<2.2V 100 mA VRECHG Recharge threshold below VBAT_REG VBAT falling, REG04[0] = 0 100 mV tRECHG Recharge deglitch time VBAT falling, REG04[0]=0 20 ms TJ = 25°C 12 15 RON_BATFET SYS-BAT MOSFET on-resistance m Ω TJ = –40°C – 125°C 12 20 INPUT VOLTAGE/CURRENT REGULATION VINDPM_REG_ACC Input voltage regulation accuracy –2% 2% USB100 85 100 mA USB150 125 150 mA USB Input current regulation limit, VBUS = IUSB_DPM 5V, current pulled from SW USB500 440 500 mA USB900 750 900 mA IADPT_DPM Input current regulation accuracy Input current limit 1.5A 1.4 1.5 1.6 A IIN_START Input current limit during system start up VSYS<2.2V 100 mA KILIM IIN = KILIM/RILIM IINDPM = 1.5A 440 485 530 A x Ω BAT OVER-VOLTAGE PROTECTION VBATOVP Battery over-voltage threshold VBAT rising, as percentage of VBAT_REG 104% VBATOVP_HYST Battery over-voltage hysteresis VBAT falling, as percentage of VBAT_REG 2% Battery over-voltage deglitch time to disable tBATOVP 1 µs charge THERMAL REGULATION AND THERMAL SHUTDOWN TJunction_REG Junction temperature regulation accuracy REG06[1:0] = 11 115 120 125 °C TSHUT Thermal shutdown rising temperature Temperature increasing 160 °C TSHUT_HYS Thermal shutdown hysteresis 30 °C Thermal shutdown rising deglitch Temperature increasing delay 1 ms Thermal shutdown falling deglitch Temperature decreasing delay 1 ms 8 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :bq24196 |
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