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A4935 Datasheet(PDF) 4 Page - Allegro MicroSystems |
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A4935 Datasheet(HTML) 4 Page - Allegro MicroSystems |
4 / 25 page Automotive 3-Phase MOSFET Driver A4935 4 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com Characteristics Symbol Test Conditions Min. Typ. Max. Units Supply and Reference Load Supply Voltage Functional Operating Range1 VBB 5.5 – 50 V Load Supply Quiescent Current IBBQ RESET = high, outputs = low, VBB = 12 V – 10 14 mA IBBS RESET = low, Sleep mode, VBB = 12 V – – 10 μA Logic Supply Voltage VDD 3.0 – 5.5 V Logic Supply Quiescent Current IDDQ RESET = high, outputs = low – 4 6 mA IDDS RESET = low – – 10 μA VREG Output Voltage VREG VBB > 9 V, IREG = 0 to 15 mA 12.5 13 13.80 V 7.5 V < VBB ≤ 9 V, IREG = 0 to 10 mA 12.5 13 13.80 V 6 V < VBB ≤ 7.5 V, IREG = 0 to 9 mA 2×VBB – 2.5 –– V 5.5 V < VBB ≤ 6 V, IREG < 8 mA 8.5 9.5 – V Bootstrap Diode Forward Voltage VfBOOT ID = 10 mA 0.4 0.7 1.0 V ID = 100 mA 1.5 2.2 2.8 V Bootstrap Diode Resistance rD rD(100mA) = (VfBOOT(150mA) – VfBOOT(50mA)) / 100 mA 610 20 Ω Bootstrap Diode Current Limit IDBOOT 250 500 750 mA Top-off Charge Pump Current Limit ITOCPM – 400 – μA High-Side Gate Drive Static Load Resistance RGSH 250 – – kΩ Gate Output Drive Turn-On Time tr CLOAD = 1 nF, 20% to 80% – 35 – ns Turn-Off Time tf CLOAD = 1 nF, 80% to 20% – 20 – ns Pullup On Resistance RDS(on)UP TJ = 25°C, IGHx = –150 mA 6 8 12 Ω TJ = 150°C, IGHx = –150 mA 10 13 16 Ω Pulldown On Resistance RDS(on)DN TJ = 25°C, IGLx = 150 mA 2 3 4 Ω TJ = 150°C, IGLx = 150 mA 3 4.5 6 Ω GHx Output Voltage VGHX Bootstrap capacitor fully charged VCx – 0.2 –– V GLx Output Voltage VGLX VREG – 0.2 –– V Turn-Off Propagation Delay2 tP(off) Input change to unloaded gate output change 60 90 150 ns Turn-On Propagation Delay2 tP(on) Input change to unloaded gate output change 60 90 150 ns Propagation Delay Matching, Phase-to-Phase ∆tPP Measured between corresponding transition points on two sequential phases –10– ns Propagation Delay Matching, On-to-Off ∆tOO Measured across one phase – 10 – ns ELECTRICAL CHARACTERISTICS valid at TJ = –40°C to 150°C, VDD = 3 to 5.5 V, VBB = 7 to 50 V, unless noted otherwise Continued on the next page… |
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