CSD17304Q3

SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

30

V

Drain to Source Leakage Current

1

mA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

0.9

1.3

1.8

V

9.8

12.6

m

Ω

Drain to Source On Resistance

6.9

8.8

m

Ω

5.9

7.5

m

Ω

Transconductance

48

S

Dynamic Characteristics

Input Capacitance

735

955

pF

Output Capacitance

390

505

pF

f = 1MHz

Reverse Transfer Capacitance

29

38

pF

Series Gate Resistance

1.1

2.2

Ω

Gate Charge Total (4.5V)

5.1

6.6

nC

Gate Charge Gate to Drain

1.1

nC

Gate Charge Gate to Source

1.8

nC

Qg(th)

Gate Charge at Vth

0.9

nC

Output Charge

9.9

nC

Turn On Delay Time

5.1

ns

Rise Time

9.1

ns

Turn Off Delay Time

10.4

ns

Fall Time

3.1

ns

Diode Characteristics

Diode Forward Voltage

0.85

1

V

Reverse Recovery Charge

14.5

nC

di/dt = 300A/ms

Reverse Recovery Time

17.3

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

3.9

°C/W

57

°C/W

(1)

(2)

2

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