CSD17304Q3_10 datasheet(5/11 Pages) TI1

Part #	CSD17304Q3

Description	The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

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TC - Case Temperature - °C

-75

-25

25

75

125

175

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1

G007

ID = 17A

VGS = 8V

VSD - Source-to-Drain Voltage - V

0

0.2

0.4

0.6

0.8

1

1.2

0.0001

0.001

0.01

0.1

1

10

100

TC = 25°C

TC = 125°C

G008

VDS - Drain-to-Source Voltage - V

0.01

0.1

1

10

100

0.01

0.1

1

10

100

1k

1ms

10ms

11110

1s

DC

100ms

G009

Area Limited

by RDS(on)

Single Pulse

Typical RθJA = 126°C/W (min Cu)

t(AV) - Time in Avalanche - ms

0.01

0.1

1

10

100

1

10

100

1k

1

10

100

1k

TC = 25°C

TC = 125°C

G010

TC - Case Temperature - °C

-50

-25

0

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

G011

CSD17304Q3

www.ti.com

SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs. Temperature

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