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AO3434A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO3434A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AO3434A Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±10 µA VGS(th) Gate Threshold Voltage 0.7 1.05 1.5 V ID(ON) 20 A 42 52 TJ=125°C 66 82 47 60 m Ω 59 78 m Ω gFS 15 S VSD 0.75 1 V IS 1.5 A Ciss 245 pF Coss 35 pF Crss 20 pF Rg 5 Ω Qg(10V) 5.7 10 nC Qg(4.5V) 2.6 5 nC Qgs 0.5 nC Qgd 1.0 nC t 2 ns Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=4A Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS VDS=VGS ID=250µA VDS=0V, VGS=±10V Gate-Body leakage current Forward Transconductance Gate Drain Charge Total Gate Charge Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Zero Gate Voltage Drain Current RDS(ON) Static Drain-Source On-Resistance m Ω IS=1A,VGS=0V VDS=5V, ID=4A VGS=2.5V, ID=2A VGS=4.5V, ID=3A Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=15V, ID=4A Gate Source Charge tD(on) 2 ns tr 3.5 ns tD(off) 22 ns tf 3.5 ns trr 6.5 ns Qrr 7.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω Turn-Off Fall Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 1: Sep. 2012 www.aosmd.com Page 2 of 5 |
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