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AO3438 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO3438 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 4 page AO3438 Symbol Min Typ Max Units BVDSS 20 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 0.5 0.7 1 V ID(ON) 16 A 51 62 TJ=125°C 68 85 58 70 m Ω 68 85 m Ω gFS 11 S VSD 0.7 1 V IS 2 A Ciss 260 320 pF Coss 48 pF Crss 27 pF Rg 3 4.5 Ω Qg 2.9 3.8 nC Qgs 0.4 nC Qgd 0.6 nC tD(on) 2.5 ns tr 3.2 ns tD(off) 21 ns tf 3 ns trr 14 19 ns Qrr 3.8 nC 12 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=0V, VDS=10V, f=1MHz Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=5V, VDS=10V, RL=3.3Ω, RGEN=6Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=10V, ID=3A Gate Source Charge m Ω VGS=2.5V, ID=2.8A IS=1A,VGS=0V VDS=5V, ID=3A VGS=1.8V, ID=2.5A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS=VGS ID=250µA VDS=20V, VGS=0V VDS=0V, VGS=±8V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=4.5V, VDS=5V VGS=4.5V, ID=3A Reverse Transfer Capacitance IF=3A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: Nov. 2010 Alpha & Omega Semiconductor, Ltd. |
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Similar Description - AO3438_10 |
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