AO4314 datasheet(4/6 Pages) AOSMD

Part #	AO4314

Description	36V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

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4 / 6 page

AO4314

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

0

5

10

15

20

Q

g (nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

1200

1400

1600

1800

0

6

12

18

24

30

36

V

DS (Volts)

Figure 8: Capacitance Characteristics

C

iss

C

oss

C

rss

V

DS=18V

I

D=20A

0.0

0.1

1.0

10.0

100.0

1000.0

0.01

0.1

1

10

100

V

DS (Volts)

Figure 10: Maximum Forward Biased

Safe Operating Area (Note F)

10s

1ms

DC

R

DS(ON)

limited

T

J(Max)=150°C

T

A=25°C

100

µs

100ms

10

µs

10ms

1.0

10.0

100.0

1000.0

1

10

100

1000

Time in avalanche, t

A (µ

µµµs)

Figure 12: Single Pulse Avalanche capability (Note

C)

T

A=25°C

T

A=150°C

T

A=100°C

T

A=125°C

0

2

4

6

8

10

0

5

10

15

20

Q

g (nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

1200

1400

1600

1800

0

6

12

18

24

30

36

V

DS (Volts)

Figure 8: Capacitance Characteristics

C

iss

C

oss

C

rss

V

DS=18V

I

D=20A

1

10

100

1000

10000

0.00001

0.001

0.1

10

1000

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

T

A=25°C

0.0

0.1

1.0

10.0

100.0

1000.0

0.01

0.1

1

10

100

V

DS (Volts)

Figure 10: Maximum Forward Biased

Safe Operating Area (Note F)

10s

1ms

DC

R

DS(ON)

limited

T

J(Max)=150°C

T

A=25°C

100

µs

100ms

10

µs

10ms

1.0

10.0

100.0

1000.0

1

10

100

1000

Time in avalanche, t

A (µ

µµµs)

Figure 12: Single Pulse Avalanche capability (Note

C)

T

A=25°C

T

A=150°C

T

A=100°C

T

A=125°C

Rev 0: December 2010

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Page 4 of 6

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