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DTS2012 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd

Part # DTS2012
Description  N-Channel 30 V (D-S) MOSFET
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Manufacturer  DINTEK [DinTek Semiconductor Co,.Ltd]
Direct Link  http://www.daysemi.jp/
Logo DINTEK - DinTek Semiconductor Co,.Ltd

DTS2012 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd

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1
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET® Power MOSFET
Typical ESD Protection 2000 V HBM
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Portable Devices
- Load Switch
- Battery Switch
Load Switch for Motors, Relays and Solenoids
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (A)
a
Qg (Typ.)
30
0.045 at VGS = 10 V
4
4 nC
0.049 at VGS = 4.5 V
4
0.060 at VGS = 2.5 V
4
Notes:
a. Package limited, TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4a
A
TC = 70 °C
4a
TA = 25 °C
4a, b, c
TA = 70 °C
3.7b, c
Pulsed Drain Current (t = 300 µs)
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
2.3a
TA = 25 °C
1.3b, c
Maximum Power Dissipation
TC = 25 °C
PD
2.8
W
TC = 70 °C
1.8
TA = 25 °C
1.56b, c
TA = 70 °C
1.0b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
D
S
G
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
 5 s
RthJA
60
80
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
34
45
Top View
SOT-323
SC-70 (3-LEADS)
G
S
D
1
2
3
DTS
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daysemi.jp


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