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AD7825BRU Datasheet(PDF) 4 Page - Analog Devices

Part # AD7825BRU
Description  3 V/5 V, 2 MSPS, 8-Bit, 1-, 4-, 8-Channel Sampling ADCs
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD7825BRU Datasheet(HTML) 4 Page - Analog Devices

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AD7822/AD7825/AD7829
–4–
REV. B
Parameter 5 V
10%
3 V
10%
Unit
Conditions/Comments
t1
420
420
ns max
Conversion Time.
t2
20
20
ns min
Minimum CONVST Pulsewidth.
t3
30
30
ns min
Minimum time between the rising edge of RD and next falling edge of convert start.
t4
110
110
ns max
EOC Pulsewidth.
70
70
ns min
t5
10
10
ns max
RD rising edge to EOC pulse high.
t6
0
0
ns min
CS to RD setup time.
t7
0
0
ns min
CS to RD hold time.
t8
30
30
ns min
Minimum RD Pulsewidth.
t9
3
10
20
ns max
Data access time after RD low.
t10
4
5
5
ns min
Bus relinquish time after RD high.
20
20
ns max
t11
10
10
ns min
Address setup time before falling edge of RD.
t12
15
15
ns min
Address hold time after falling edge of RD.
t13
200
200
ns min
Minimum time between new channel selection and convert start.
tPOWER UP
25
25
µs typ
Power-up time from rising edge of CONVST using on-chip reference.
tPOWER UP
11
µs max
Power-up time from rising edge of CONVST using external 2.5 V reference.
NOTES
1Sample tested to ensure compliance.
2See Figures 20, 21, and 22.
3Measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V with V
DD = 5 V
± 10%, and time required for
an output to cross 0.4 V or 2.0 V with VDD = 3 V
± 10%.
4Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t 10, quoted in the timing characteristics is the true bus relinquish time
of the part and as such is independent of external bus loading capacitances.
ABSOLUTE MAXIMUM RATINGS
*
(TA = 25
°C unless otherwise noted)
VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND
VIN1 to VIN8 . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Reference Input Voltage to AGND . . . –0.3 V to VDD + 0.3 V
VMID Input Voltage to AGND . . . . . . . –0.3 V to VDD + 0.3 V
Digital Input Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V
Digital Output Voltage to DGND . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
°C
Plastic DIP Package, Power Dissipation . . . . . . . . . . 450 mW
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 105
°C/W
Lead Temperature, (Soldering, 10 sec) . . . . . . . . . . . 260
°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
θ
JA Thermal Impedance
. . . . . . . . . . . . . . . . . . . . . 75
°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . . 450 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 128°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
(VREF IN/OUT = 2.5 V. All specifications –40 C to +85 C unless otherwise noted.)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7822/AD7825/AD7829 features proprietary ESD protection circuitry, perma-
nent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
TIMING CHARACTERISTICS1, 2


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