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AOT20S60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT20S60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  AOT20S60/AOB20S60/AOTF20S60 600V 20A αααα MOS TM Power Transistor General Description Product Summary VDS @ Tj,max 700V IDM 80A RDS(ON),max 0.199 Ω Qg,typ 20nC Eoss @ 400V 4.9 µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT20S60L & AOB20S60L & AOTF20S60L Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt H TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. °C/W 0.5 -- 65 -- Continuous Drain Current TC=25°C ID AOTF20S60 Thermal Characteristics Parameter Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Repetitive avalanche energy C Maximum Junction-to-Case 0.47 A °C Units V/ns °C °C/W Maximum Case-to-sink A Maximum Junction-to-Ambient A,D °C/W W/ oC Avalanche Current C The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOT20S60/AOB20S60 AOTF20S60 Junction and Storage Temperature Range TC=25°C dv/dt 2.1 Power Dissipation B AOTF20S60L Drain-Source Voltage 14* 14 Gate-Source Voltage V A TC=100°C Pulsed Drain Current C mJ mJ Single pulsed avalanche energy G W PD 0.3 Derate above 25 oC 0.4 266 600 ±30 80 20* 14* 3.3 100 20 -55 to 150 300 2.5 65 65 AOTF20S60L AOT20S60/AOB20S60 20* 20 50 3.4 23 188 37.8 TO-263 D 2PAK G D S G D S D S G Top View TO-220F(3kVAC; 1s) TO-220 G D S AOT20S60 AOB20S60 AOTF20S60 Rev 5: Sep 2012 www.aosmd.com Page 1 of 7 |
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