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AOT270AL Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT270AL Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 140A RDS(ON) (at VGS=10V) < 2.6m Ω (< 2.4mΩ∗) RDS(ON) (at VGS=6V) < 3.2m Ω (< 3.0mΩ∗) 100% UIS Tested 100% Rg Tested Symbol The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 75V G D S TO220 Top View Bottom G G S D D S D D TO-263 Top View Bottom View D D S G G S VDS VGS IDM IAS EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 Typ Max TC=25°C 2.1 250 TC=100°C Junction and Storage Temperature Range -55 to 175 Power Dissipation B PD °C Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W RθJA 12 50 15 Parameter 17 A 120 V ±20 Gate-Source Voltage A TA=25°C 560 Pulsed Drain Current C V Drain-Source Voltage 75 Continuous Drain Current G ID 140 110 TC=25°C TC=100°C Continuous Drain Current 720 21.5 Avalanche energy L=0.1mH C IDSM W A TA=70°C mJ Avalanche Current C Power Dissipation A PDSM W TA=70°C 500 1.3 TA=25°C Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 0.25 60 0.3 Rev 0 : Dec. 2012 www.aosmd.com Page 1 of 6 |
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