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908E621 Datasheet(PDF) 36 Page - Freescale Semiconductor, Inc |
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908E621 Datasheet(HTML) 36 Page - Freescale Semiconductor, Inc |
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36 / 60 page  Analog Integrated Circuit Device Data 36 Freescale Semiconductor 908E621 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES H0EN — H0 Input 2-pin Hall-effect sensor Enable Bit This read/write bit enables the 2-pin hall-effect sensor sense circuitry. Reset clears H0EN bit. 1 = Hall-port H0 is switched on and sensed 0 = Hall-port H0 disabled H0PD — Hall-port Pull-up Disable Bit This read/write bit disables the H0 Pull-up resistor. Reset clears H0PD bit. 1 = Hall-port pull-up resistor on H0 disabled 0 = Hall-port pull-up resistor on H0 enabled H0MS — H0 Mode Select These read/write bits select the mode of the H0 input Reset clears H0MS bit. 1 = H0 is 2-pin hall-sensor input 0 = H0 is general purpose input Half-bridge Outputs Outputs HB1:HB4 provide four low-resistive half-bridge output stages. The half-bridges can be used in H-bridge, high side or low side configurations. Reset clears all bits in the H-bridge Output Register (HBOUT) owing to the fact that all half-bridge outputs are switched off. HB1:HB4 output features • Short-circuit (over-current) protection on high side and low side MOSFETs • Current recopy feature (low side MOSFET) • Over-temperature protection • Over-voltage and under-voltage protection • Active clamp on low side MOSFET Figure 22. Half-bridge Push-Pull Output Driver Half-bridge Control Each output MOSFET can be controlled individually. The general enable of the circuitry is done by setting PSON in the System Control Register (SYSCTL). The HBx_L and HBx_H bits form one half-bridge. It is not possible to switch on both MOSFETs in one half-bridge at the same time. If both bits are set, the high side MOSFET is in PWM mode. To avoid both MOSFETs (high side and low side) of one half-bridge being on at the same time, a break-before-make circuit exists. Switching the high side MOSFET on is inhibited as long as the potential between gate and VSS is not below a certain threshold. Switching the low side MOSFET on is blocked as long as the potential between gate and source of the high side MOSFET did not fall below a certain threshold. High Side Driver Charge Pump Over-temperature Protection Over-current Protection Low Side Driver Current Recopy Current Limitation Active Clamp Over-current Protection Control On/Off Status On/Off Status PWM HBx VSUP GND PWM |
Similar Part No. - 908E621_12 |
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Similar Description - 908E621_12 |
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