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FDD8870_F085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD8870_F085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 11 page  ©2013 Fairchild Semiconductor Corporation FDD8870_F085 / FDU8870_F085 Rev. C1 FDD8870_F085 / FDU8870_F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features •rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A •rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 160 A Continuous (TC = 25 oC, V GS = 10V) (Note 1) Continuous (TC = 25 oC, V GS = 4.5V) (Note 1) 150 A Continuous (Tamb = 25 oC, V GS = 10V, with R θJA = 52 oC/W) 21 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 2) 690 mJ PD Power dissipation 160 W Derate above 25oC1.07 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252, TO-251 0.94 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, TO-251 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W D G S G DS I-PAK (TO-251AA) G S D TO-252 D-PAK (TO-252) Jan 2013 • Qualified to AEC Q101 • RoHS Compliant |
Similar Part No. - FDD8870_F085_13 |
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Similar Description - FDD8870_F085_13 |
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