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AOI7N65 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOI7N65 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary 750V@150℃ ID (at VGS=10V) 7A RDS(ON) (at VGS=10V) < 1.56 Ω 100% UIS Tested! 100% Rg Tested! Symbol VDS The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Drain-Source Voltage 650 G D S G S D G S D Top View TO252 DPAK Bottom View G G D D S S Top View Bottom View TO251A IPAK AOD7N65 AOI7N65 VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC Maximum Junction-to-Ambient A,G TC=25°C - 55 Maximum Thermal Characteristics Units °C/W 45 Parameter Typical W W/ oC Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 °C Junction and Storage Temperature Range -50 to 150 °C Power Dissipation B V ±30 Gate-Source Voltage TC=100°C A ID TC=25°C 7 4.3 23 Pulsed Drain Current C Continuous Drain Current B V Drain-Source Voltage 650 mJ Avalanche Current C 144 Repetitive avalanche energy C Derate above 25 oC 178 1.4 A 3.1 Single pulsed avalanche energy H 288 mJ V/ns 5 PD Maximum Case-to-sink A Maximum Junction-to-Case D,F °C/W °C/W 0.5 0.5 0.7 Rev 0: Feb 2012 www.aosmd.com Page 1 of 6 |
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