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AOD400 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOD400
Description  N-Channel Enhancement Mode Field Effect Transistor
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD400 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AOD400
Symbol
Min
Typ
Max
Units
BVDSS
30
V
0.002
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
0.7
1.1
1.5
V
ID(ON)
40
A
25
30
TJ=125°C
35
42
28.5
36
mΩ
40.5
52
mΩ
gFS
21
S
VSD
0.77
1
V
IS
3
A
Ciss
857
1030
pF
Coss
97
pF
Crss
71
pF
Rg
1.2
3.6
Qg
9.7
12
nC
Qgs
1.63
nC
Qgd
3.1
nC
tD(on)
3.5
ns
tr
3.7
ns
tD(off)
25
ns
tf
4
ns
trr
20
24
ns
Qrr
13
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Rise Time
DYNAMIC PARAMETERS
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=6Ω
SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
Total Gate Charge
Gate Drain Charge
Turn-On DelayTime
Gate Source Charge
Turn-Off DelayTime
Turn-Off Fall Time
mΩ
VGS=4.5V, ID=10A
IS=1A,VGS=0V
VDS=5V, ID=10A
VGS=2.5V, ID=3.5A
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IF=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=10A
Reverse Transfer Capacitance
IF=10A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 1 : Sep. 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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