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AOD400 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOD400 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOD400 Symbol Min Typ Max Units BVDSS 30 V 0.002 1 TJ=55°C 5 IGSS 100 nA VGS(th) 0.7 1.1 1.5 V ID(ON) 40 A 25 30 TJ=125°C 35 42 28.5 36 mΩ 40.5 52 mΩ gFS 21 S VSD 0.77 1 V IS 3 A Ciss 857 1030 pF Coss 97 pF Crss 71 pF Rg 1.2 3.6 Ω Qg 9.7 12 nC Qgs 1.63 nC Qgd 3.1 nC tD(on) 3.5 ns tr 3.7 ns tD(off) 25 ns tf 4 ns trr 20 24 ns Qrr 13 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On Rise Time DYNAMIC PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A VGS=10V, VDS=15V, RL=1.5Ω, RGEN=6Ω SWITCHING PARAMETERS Body Diode Reverse Recovery Time Total Gate Charge Gate Drain Charge Turn-On DelayTime Gate Source Charge Turn-Off DelayTime Turn-Off Fall Time mΩ VGS=4.5V, ID=10A IS=1A,VGS=0V VDS=5V, ID=10A VGS=2.5V, ID=3.5A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=250µA VDS=24V, VGS=0V VDS=0V, VGS= ±12V Zero Gate Voltage Drain Current Gate-Body leakage current IF=10A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=4.5V, VDS=5V VGS=10V, ID=10A Reverse Transfer Capacitance IF=10A, dI/dt=100A/µs VGS=0V, VDS=15V, f=1MHz A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1 : Sep. 2008 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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